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Samsung debuts 3bit, 20nm 64GB NAND flash storage

Samsung debuts 3bit, 20nm 64GB NAND flash storage Created by MG1 on Oct 13, 2010

Samsung is now producing three-bit-cell, 20-nanometer NAND flash storage in 64GB capacity, accelerating the pace of storage development by entering full production with 20nm devices with 64GB capacit... »read more

More at: Electronista Add additional source

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