IBM announces computer memory breakthrough

IBM Thursday announced a breakthrough in computer memory technology, which may lead to the development of solid-state chips that can store as much data as NAND flash technology but with 100 times the performance and vastly greater lifespan.
Currently, NAND flash memory products, such as SSDs, have write rates as high as 2Gbps.
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IBM said it has produced phase-change memory (PCM) chips that can store two bits of data per cell without data corruption problems, something that has plagued PCM development from the start.
Like NAND flash memory, which is used in solid state drives (SSDs) and is embed... »read more

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